these transistors are designed for general purpose amplifier features ? pb?free packages are available maximum ratings (t a = 25 c) rating symbol max unit collector?emitter voltage v ceo 45 v collector?base voltage v cbo 50 v emitter?base voltage v ebo 6.0 v collector current ? continuous i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation, fr?4 board (note 1) t a = 25 c derated above 25 c p d 200 1.6 mw mw/ c thermal resistance, junction?to?ambient (note 1) r ja 600 c/w total device dissipation, fr?4 board (note 2) t a = 25 c derated above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient (note 2) r ja 400 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ min pad. 2. fr?4 @ 1.0 1.0 in pad. lbc847att1g series 2 emitter 3 collect or 1 base leshan radio company, ltd. general purpose transistors npn silicon applications. they are housed in the sc?89 package which sc-89 ordering information device marking package shipping 2 lbc847att1g 1e sc?89 3,000 / tape & reel lbc847btt1g 1f 3,000 / tape & reel lbc847ctt1g 1g 3,000 / tape & reel is designed for low power surface mount applications. sc?89 sc?89 rev.o 1/5 s-lbc847att1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lbc847att1g s-lbc847btt1g s-lbc847ctt1g
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = 10 ma) lbc847 series v (br)ceo 45 ? ? v collector ?emitter breakdown voltage (i c = 10 a, v eb = 0) lbc847 series v (br)ces 50 ? ? v collector ?base breakdown voltage (i c = 10 a) lbc847 series v (br)cbo 50 ? ? v emitter ?base breakdown voltage (i e = 1.0 a) lbc847 series v (br)ebo 6.0 ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain (i c = 10 a, v ce = 5.0 v) lbc847a lbc847b lbc847c (i c = 2.0 ma, v ce = 5.0 v) lbc847a lbc847b lbc847c h fe ? ? ? 110 200 420 90 150 270 180 290 520 ? ? ? 220 450 800 ? collector ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) collector ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ?emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base ?emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small?signal characteristics current ?gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db leshan radio company, ltd. lbc847att1g series rev.o 2/5 s-lbc847att1g series
leshan radio company, ltd. lbc847att1g,lbc847btt1g,lbc847ctt1g figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. asaturationo and aono voltages i c , collector current (madc) 0.2 0.5 1.0 10 20 50 0.2 100 figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 100 70 30 7.0 5.0 3.0 0.7 0.3 0.1 0.2 1.0 10 100 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 rev.o 3/5 lbc847att1g series s-lbc847att1g series
figure 5. normalized thermal response 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 0.001 0.01 0.1 1.0 r(t), normalized transient thermal resistance t, time (s) single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 6. capacitances v r , reverse voltage (volts) 10 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 7.0 5.0 3.0 2.0 c, capacitance (pf) 0.8 4.0 8.0 t a = 25 c c ob c ib figure 7. current?gain ? bandwidth product i c , collector current (madc) 80 100 200 300 400 60 20 40 30 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c f, current-gain - bandwidth product (mhz) t leshan radio company, ltd. lbc847att1g,lbc847btt1g,lbc847ctt1g rev.o 4/5 lbc847att1g series s-lbc847att1g series
leshan radio company, ltd. g m 0.08 (0.003) x d 3 pl j -x- -y- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 463c-01 obsolete, new standard 463c-02. a b y 12 3 n 2 pl k c -t- seating plane dim a min nom min nom inches 1.50 1.60 1.70 0.059 millimeters b 0.75 0.85 0.95 0.030 c 0.60 0.70 0.80 0.024 d 0.23 0.28 0.33 0.009 g 0.50 bsc h 0.53 ref j 0.10 0.15 0.20 0.004 k 0.30 0.40 0.50 0.012 l 1.10 ref m ??? ??? 10 ??? n ??? ??? 10 ??? s 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 bsc 0.021 ref 0.006 0.008 0.016 0.020 0.043 ref ??? 10 ??? 10 0.063 0.067 max max m h h l g recommended pattern of solder pads s sc - 8 9 rev.o 5/5 lbc847att1g series s-lbc847att1g series
|
